MACOM Announces Addition to GaN Portfolio

MACOM GaN in Plastic

The surface mount technology enables faster time-to-market through the use of high volume commercial, surface mount assembly methods. Photo: MACOM

[Via Satellite 03-11-2014] M/A-COM Technology Solutions (MACOM) has introduced the MAGX-000035-01000P, the newest addition to its gallium nitride (GaN) in Plastic series. The wideband packaged GaN power transistor is designed for high-performance civilian and military radar and communications systems. This 10 W GaN on silicon carbide (SiC) unmatched power transistor, which offers broad RF frequency capability, reliable high voltage operations and a small footprint enables faster time-to-market through the use of high volume commercial, surface mount assembly methods.

With a 3 mm by 6 mm DFN and 14-Lead package, the MAGX-000035-01000P operates from DC-3.5 GHz and leverages thermal management techniques to provide reliability in true surface mount applications. The device also operates at 50 V drain bias, resulting in greater power density performance, higher efficiency and smaller impedance matching circuits due to improved device parasitics. The high voltage operation also benefits the overall system design with smaller energy storage capacitors and lower current draw.

“MACOM’s 10 W GaN in Plastic power transistor offers both pulsed and CW modes of operation making it a highly versatile driver or final power stage for multiple applications,” said Paul Beasly, product manager at MACOM. “Furthermore, the device has been thermally designed to operate with standard surface-mount assembly, which significantly simplifies the design and implementation into higher level systems.”

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