[Via Satellite 09-20-13] Macom Technology Solutions, a supplier of high-performance Radio Frequency (RF), microwave and millimeter wave products, has released a new ceramic Gallium nitride (GaN) on Silicon carbide (SiC) High-Electron Mobility Transistor (HEMT).
The MAGX-001090-600L00 is a gold-metalized, matched GaN on SiC, RF power transistor optimized for pulsed avionics applications, such as secondary surveillance radar in air traffic control systems. The MAGX-001090-600L00 provides 600 W of output power with a typical 21.4 dB of gain and 63 percent efficiency. The device has very low thermal resistance of 0.05 degrees C/W and load mismatch tolerance of 5-to-1. In addition, the device has the lowest pulse drop of 0.2 dB and also can be used effectively under more demanding Mode-S ELM operating conditions.
Macom’s GaN transistor technology has been qualified with accelerated, high-temperature lifetime tests and this device has a predicted Mean Time to Failure (MTTF) of more than 600 years at a maximum junction temperature of 200 degrees Celsius. The device also boasts very high breakdown voltages, which provides customers with reliable and stable operation even in extreme load mismatch conditions.
