[Satellite TODAY 06-03-11] Technology developer Cree is set to demonstrate its GaN HEMT MMIC high-power amplifier for satellite communication applications at the 2011 IEEE International Microwave Symposium in Baltimore, the company announced June 2.

    In a statement, Cree’s RF Products Director Jim Milligan called the demonstration a first of its kind for the industry. “Due to the outstanding linear efficiency and power gains provided by our GaN HEMT technology, we anticipate our GaN products will have a large impact on how thermal management is approached and will enable reductions in both size and weight for commercial and military satellite communication systems.”

    Cree’s MMIC is a 50 ohm, 25-watt peak power two-stage GaN HEMT high-power amplifier that aims to offers linear efficiency of up to 60 percent higher than standard solutions in a small footprint package.

    “Because this device operates at higher voltages, the transistors draw less current, resulting in lower power distribution losses and higher overall system efficiencies,” Milligan said.