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MACOM Announces New 650 W GaN on SiC HEMT Pulsed Power Transistor

By | March 26, 2015
      MAGX-000912-650L0x

      MAGX-000912-650L0S GaN on SiC HEMT Pulsed Power Transistor. Photo: MACOM

      [Via Satellite 03-26-2015] M/A-COM Technology Solutions announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications. The transistor is available in standard flange or earless flange packaging.

      The internally matched MAGX-000912-650L0x features 650 W of peak output power with 20 dB typical gain and 62 percent drain efficiency. The semiconductor structure is designed to achieve a high drain breakdown voltage (BVdss), which enables reliable and stable operation at 50V in extreme mismatched load conditions unparalleled with older semiconductor technologies. Other features include flat gain versus frequency performance and a common-source configuration for broadband class AB operation.