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Northrop Grumman Launches Two High Power GaN Amplifiers for Ka-band Terminals

By | June 4, 2014
      Northrop Grumman

      APN228 high power GaN amplifier model. Photo: Northrop Grumman

      [Via Satellite 06-04-2014] Northrop Grumman released two new high power gallium nitride (GaN) Monolithic Microwave Integrated Circuit (MMIC) power amplifiers for Ka-band satellite terminals and point-to-point digital communication links. The APN228 and APN229 power amplifiers provide saturated output power of 13 and 8 watts, respectively.

      The amplifiers operate between 27 and 31 GHz and allow for higher data rates when integrated with high efficiency Solid State Power Amplifiers (SSPAs).

      “GaN-based SSPAs are a far more desirable solution to costly traveling-wave tubes which require more complex, high voltage power supplies and a lengthier production time,” said Frank Kropschot, general manager of microelectronics products and services at Northrop Grumman.