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MACOM Announces IP Licensing Program for GaN-on-Silicon Technology

By | April 2, 2014
      Silicon wafer

      Silicon wafer. Photo: Wikimedia Commons

      [Via Satellite 04-02-2014] M/A-COM Technology Solutions has announced an IP licensing program for Gallium Nitride (GaN) on Silicon technology. MACOM detailed progress in two areas critical to its vision of enabling the mainstream adoption of GaN as a large-scale RF semiconductor technology across the industry.

      The company has announced a license and epitaxial (epi) wafer supply agreement which will enable compound semiconductor epi supplier IQE to manufacture GaN-on-Silicon epi at 4, 6 and 8-inch diameters in high volume for RF applications. This will allow MACOM to deliver GaN RF products with breakthrough bandwidth and efficiency at mainstream 8-inch silicon cost structures.

      MACOM has also announced that it is trying to make GaN-on-Silicon technology available to select companies for use in RF applications. According to the company, establishing large diameter wafer manufacturing sources will be a key factor in driving mainstream, commercial adoption of GaN technology. A guaranteed supply is important in power amplifier dependent markets such as cellular basestations.

      “We are nearing a watershed moment for the RF & Microwave industry, promising breakthrough performance for compound semiconductors and leveraging large-scale silicon production facilities that operate at orders of magnitude greater economies of scale,” said John Croteau, president and CEO, MACOM. “We believe our recent acquisition of Nitronex and its portfolio of fundamental IP rights related to GaN-on-Silicon materials, process, and device technology for RF applications provides us with the foundation for a licensing program that will help bring our vision of GaN performance at mainstream 8-inch silicon cost structures a reality.”

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